- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
55,680
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 100A PQFN | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | - | 30V | 42A (Ta), 100A (Tc) | 1.3 mOhm @ 50A, 10V | 2.35V @ 150µA | 120nC @ 10V | 7200pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
22,760
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 100A PQFN | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | - | 30V | 42A (Ta), 100A (Tc) | 1.3 mOhm @ 50A, 10V | 2.35V @ 150µA | 120nC @ 10V | 7200pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
|
75,000
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 100A PQFN | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | - | 30V | 42A (Ta), 100A (Tc) | 1.3 mOhm @ 50A, 10V | 2.35V @ 150µA | 120nC @ 10V | 7200pF @ 15V | 4.5V, 10V | ±20V |
