- Manufacture :
- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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48,120
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 60V 3A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | - | Surface Mount | Die | Sawn on foil | - | N-Channel | - | 60V | 3A (Tj) | 100 mOhm @ 2A, 10V | 2.2V @ 196µA | - | - | 10V | - | |||
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60,120
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 60V 3A SAWN ON FOIL | OptiMOS™ | Active | Bulk | MOSFET (Metal Oxide) | - | Surface Mount | Die | Sawn on foil | - | N-Channel | - | 60V | 3A (Tj) | 100 mOhm @ 2A, 10V | 4V @ 196µA | - | - | 10V | - | |||
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27,240
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263HV | 125W (Tc) | N-Channel | Depletion Mode | 1000V | 3A (Tj) | 6 Ohm @ 1.5A, 0V | 4.5V @ 250µA | 37.5nC @ 5V | 1020pF @ 25V | 0V | ±20V |
