- Part Status :
- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
23,840
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Infineon Technologies | MOSFET N-CH 25V 9.9A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 2.1W (Ta) | N-Channel | - | 25V | 9.9A (Ta), 21A (Tc) | 13 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4nC @ 10V | 653pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
38,660
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 25V 9.9A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 2.1W (Ta) | N-Channel | - | 25V | 9.9A (Ta), 21A (Tc) | 13 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4nC @ 10V | 653pF @ 10V | 4.5V, 10V | ±20V | ||
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51,340
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 25V 9.9A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 2.1W (Ta) | N-Channel | - | 25V | 9.9A (Ta), 21A (Tc) | 13 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4nC @ 10V | 653pF @ 10V | 4.5V, 10V | ±20V |
