- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
53,760
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Vishay Siliconix | MOSFET N-CH 60V SO-8 | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 4.5W (Tc) | N-Channel | - | 60V | 8.4A (Ta), 11.3A (Tc) | 19.5 mOhm @ 10A, 10V | 2.8V @ 250µA | 17nC @ 10V | 790pF @ 30V | 4.5V, 10V | ±20V | ||
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31,560
One step to sell excess stocks.Or submit Qty to get quotes
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Vishay Siliconix | MOSFET N-CH 60V SO-8 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 4.5W (Tc) | N-Channel | - | 60V | 8.4A (Ta), 11.3A (Tc) | 19.5 mOhm @ 10A, 10V | 2.8V @ 250µA | 17nC @ 10V | 790pF @ 30V | 4.5V, 10V | ±20V | |||
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38,440
One step to sell excess stocks.Or submit Qty to get quotes
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Vishay Siliconix | MOSFET N-CH 60V SO-8 | TrenchFET® Gen IV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 4.5W (Tc) | N-Channel | - | 60V | 8.4A (Ta), 11.3A (Tc) | 19.5 mOhm @ 10A, 10V | 2.8V @ 250µA | 17nC @ 10V | 790pF @ 30V | 4.5V, 10V | ±20V |
