3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFH5110TR2PBF
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RFQ
70,700
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Infineon Technologies MOSFET N-CH 100V 5X6 PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V
IRFH5110TR2PBF
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RFQ
25,780
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Infineon Technologies MOSFET N-CH 100V 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V
IRFH5110TRPBF
Per Unit
$0.33
RFQ
37,080
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 11A 8-PQFN HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V
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