Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFBG20L
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RFQ
45,540
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Vishay Siliconix MOSFET N-CH 1000V 1.4A TO-262 - Active Tube MOSFET (Metal Oxide) - Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - N-Channel 1000V 1.4A (Ta) 11 Ohm @ 840mA, 10V 4V @ 250µA 38nC @ 10V 500pF @ 25V 10V ±20V
IRFBG20
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RFQ
62,620
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Vishay Siliconix MOSFET N-CH 1000V 1.4A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel 1000V 1.4A (Tc) 11 Ohm @ 840mA, 10V 4V @ 250µA 38nC @ 10V 500pF @ 25V 10V ±20V
IRFBG20PBF
Per Unit
$0.93
RFQ
36,860
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 1000V 1.4A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel 1000V 1.4A (Tc) 11 Ohm @ 840mA, 10V 4V @ 250µA 38nC @ 10V 500pF @ 25V 10V ±20V
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