- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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58,180
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|
Rohm Semiconductor | MOSFET N-CH 20V 1.5A WEMT6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | N-Channel | - | 20V | 1.5A (Ta) | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | 1.5V, 4.5V | ±10V | |||
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46,720
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|
Rohm Semiconductor | MOSFET N-CH 20V 1.5A WEMT6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 110pF @ 10V | 1.5V, 4.5V | ±10V | |||
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20,860
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|
Diodes Incorporated | MOSFET N-CH 30V 2A 8-MLP | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-MLP, MicroFET (3x2) | 1W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2A (Ta) | 180 mOhm @ 1.5A, 4.5V | 700mV @ 250µA | 2.9nC @ 4.5V | 314pF @ 15V | 2.5V, 4.5V | ±12V | ||
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GET PRICE |
70,200
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|
Diodes Incorporated | MOSFET N-CH 30V 2A 8-MLP | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-MLP, MicroFET (3x2) | 1W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2A (Ta) | 180 mOhm @ 1.5A, 4.5V | 700mV @ 250µA | 2.9nC @ 4.5V | 314pF @ 15V | 2.5V, 4.5V | ±12V | ||
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GET PRICE |
65,580
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|
Diodes Incorporated | MOSFET N-CH 30V 2A 8-MLP | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-MLP, MicroFET (3x2) | 1W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2A (Ta) | 180 mOhm @ 1.5A, 4.5V | 700mV @ 250µA | 2.9nC @ 4.5V | 314pF @ 15V | 2.5V, 4.5V | ±12V | ||
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GET PRICE |
77,760
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|
Rohm Semiconductor | MOSFET N-CH 20V 1.5A TUMT3 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | N-Channel | - | 20V | 1.5A (Ta) | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | 1.8V, 4.5V | ±10V | ||
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73,140
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|
Rohm Semiconductor | MOSFET N-CH 20V 1.5A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | N-Channel | - | 20V | 1.5A (Ta) | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | 1.8V, 4.5V | ±10V | |||
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43,100
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|
Rohm Semiconductor | MOSFET N-CH 20V 1.5A TUMT3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | N-Channel | - | 20V | 1.5A (Ta) | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | 1.8V, 4.5V | ±10V | |||
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GET PRICE |
71,820
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|
Rohm Semiconductor | MOSFET N-CH 20V 1.5A TSMT5 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSMT5 | 900mW (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 180 mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | 1.8V, 4.5V | ±10V | ||
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79,640
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|
Rohm Semiconductor | MOSFET N-CH 20V 1.5A TSMT5 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSMT5 | 900mW (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 180 mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | 1.8V, 4.5V | ±10V | |||
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|
44,000
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|
Rohm Semiconductor | MOSFET N-CH 20V 1.5A TSMT5 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSMT5 | 900mW (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 180 mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | 1.8V, 4.5V | ±10V |
