3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPH3R003PL,LQ
GET PRICE
RFQ
19,040
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 90W (Tc) N-Channel - 30V 88A (Tc) 4.2 mOhm @ 44A, 4.5V 2.1V @ 300µA 50nC @ 10V 3825pF @ 15V 4.5V, 10V ±20V
TPH3R003PL,LQ
Per Unit
$0.67
RFQ
76,180
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 90W (Tc) N-Channel - 30V 88A (Tc) 4.2 mOhm @ 44A, 4.5V 2.1V @ 300µA 50nC @ 10V 3825pF @ 15V 4.5V, 10V ±20V
TPH3R003PL,LQ
Per Unit
$0.26
RFQ
47,780
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 90W (Tc) N-Channel - 30V 88A (Tc) 4.2 mOhm @ 44A, 4.5V 2.1V @ 300µA 50nC @ 10V 3825pF @ 15V 4.5V, 10V ±20V
Page 1 / 1