Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTK90N15
Per Unit
$8.05
RFQ
37,440
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 150V 90A TO-264 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 390W (Tc) N-Channel - 150V 90A (Tc) 16 mOhm @ 45A, 10V 4V @ 250µA 240nC @ 10V 6400pF @ 25V 10V ±20V
FQA90N08
Per Unit
$2.10
RFQ
29,320
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 80V 90A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 214W (Tc) N-Channel - 80V 90A (Tc) 16 mOhm @ 45A, 10V 4V @ 250µA 110nC @ 10V 3250pF @ 25V 10V ±25V
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