- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
50,600
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 272W (Tc) | N-Channel | 600V | 11A (Tc) | 650 mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37nC @ 10V | 1990pF @ 25V | 10V | ±30V | ||
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GET PRICE |
33,360
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|
Microsemi Corporation | MOSFET N-CH 400V 11A TO247AD | POWER MOS IV® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD | 180W (Tc) | N-Channel | 400V | 11A (Tc) | 650 mOhm @ 5.5A, 10V | 4V @ 1mA | 55nC @ 10V | 950pF @ 25V | 10V | ±30V | ||
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GET PRICE |
31,640
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 620V 11A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 50W (Tc) | N-Channel | 620V | 11A (Tc) | 650 mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37nC @ 10V | 1990pF @ 25V | 10V | ±30V | ||
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65,480
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 620V 11A TO220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 39W (Tc) | N-Channel | 620V | 11A (Tc) | 650 mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37nC @ 10V | 1990pF @ 25V | 10V | ±30V | |||
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56,080
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 11A (Ta) | 650 mOhm @ 5.5A, 10V | 4V @ 1mA | 28nC @ 10V | 1550pF @ 25V | 10V | ±30V | |||
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45,560
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|
Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | U-MOSIX | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 11A (Ta) | 650 mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34nC @ 10V | 1320pF @ 300V | 10V | ±30V | |||
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75,060
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO262F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | TO-262F | 27.8W (Tc) | N-Channel | 600V | 11A (Tc) | 650 mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37nC @ 10V | 1990pF @ 25V | 10V | ±30V | |||
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20,340
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 37.9W (Tc) | N-Channel | 600V | 11A (Tc) | 650 mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37nC @ 10V | 1990pF @ 25V | 10V | ±30V |
