Supplier Device Package :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
R6035KNZ1C9
Per Unit
$3.02
RFQ
17,120
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CHANNEL 600V 35A TO247 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 379W (Tc) N-Channel 600V 35A (Tc) 102 mOhm @ 18.1A, 10V 5V @ 1mA 72nC @ 10V 3000pF @ 25V 10V ±20V
R6035KNZC8
Per Unit
$6.32
RFQ
29,260
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CHANNEL 600V 35A TO3PF - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 102W (Tc) N-Channel 600V 35A (Tc) 102 mOhm @ 18.1A, 10V 5V @ 1mA 72nC @ 10V 3000pF @ 25V 10V ±20V
R6035ENZC8
Per Unit
$3.23
RFQ
61,640
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 35A TO3PF - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 120W (Tc) N-Channel 600V 35A (Tc) 102 mOhm @ 18.1A, 10V 4V @ 1mA 110nC @ 10V 2720pF @ 25V 10V ±20V
R6035ENZ1C9
Per Unit
$3.23
RFQ
26,540
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 35A TO247 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 120W (Tc) N-Channel 600V 35A (Tc) 102 mOhm @ 18.1A, 10V 4V @ 1mA 110nC @ 10V 2720pF @ 25V 10V ±20V
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