- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
23,920
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|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | ||
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GET PRICE |
63,340
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|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | ||
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GET PRICE |
13,620
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|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | ||
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|
GET PRICE |
59,180
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|
Infineon Technologies | MOSFET N-CH 80V 18A WDSON-2 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 78W (Tc) | N-Channel | - | 80V | 18A (Ta), 90A (Tc) | 4.4 mOhm @ 30A, 10V | 3.5V @ 97µA | 73nC @ 10V | 5700pF @ 40V | 10V | ±20V | ||
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15,580
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|
Infineon Technologies | MOSFET N-CH 80V 18A WDSON-2 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 78W (Tc) | N-Channel | - | 80V | 18A (Ta), 90A (Tc) | 4.4 mOhm @ 30A, 10V | 3.5V @ 97µA | 73nC @ 10V | 5700pF @ 40V | 10V | ±20V | |||
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|
71,220
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 80V 18A WDSON-2 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 78W (Tc) | N-Channel | - | 80V | 18A (Ta), 90A (Tc) | 4.4 mOhm @ 30A, 10V | 3.5V @ 97µA | 73nC @ 10V | 5700pF @ 40V | 10V | ±20V |
