Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTHL040N65S3F
Per Unit
$7.63
RFQ
60,360
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor SUPERFET3 650V TO247 SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 446W (Tc) N-Channel - 650V 65A (Tc) 40 mOhm @ 32.5A, 10V 5V @ 6.5mA 158nC @ 10V 5940pF @ 400V 10V ±30V
FCH040N65S3-F155
Per Unit
$6.42
RFQ
40,200
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 650V 65A TO247-3 SuperFET® III Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C Through Hole TO-247-3 417W (Tc) N-Channel - 650V 65A (Tc) 40 mOhm @ 32.5A, 10V 4.5V @ 6.5mA 136nC @ 10V 4740pF @ 400V 10V ±30V
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