- Manufacture :
- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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50,860
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|
NXP USA Inc. | MOSFET N-CH 30V QFN3333 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 55W (Tc) | N-Channel | - | 30V | 40A (Tc) | 5.8 mOhm @ 10A, 10V | 2.15V @ 1mA | 24nC @ 10V | 1316pF @ 15V | 4.5V, 10V | ±20V | |||
|
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25,200
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|
NXP USA Inc. | MOSFET N-CH 30V QFN3333 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 55W (Tc) | N-Channel | - | 30V | 40A (Tc) | 5.8 mOhm @ 10A, 10V | 2.15V @ 1mA | 24nC @ 10V | 1316pF @ 15V | 4.5V, 10V | ±20V | |||
|
GET PRICE |
32,080
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|
NXP USA Inc. | MOSFET N-CH 30V QFN3333 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 55W (Tc) | N-Channel | - | 30V | 40A (Tc) | 5.8 mOhm @ 10A, 10V | 2.15V @ 1mA | 24nC @ 10V | 1316pF @ 15V | 4.5V, 10V | ±20V | |||
|
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22,960
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|
Vishay Siliconix | MOSFET N-CHAN 60V POWERPAK SO-8 | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | - | 60V | 20.7A (Ta), 73A (Tc) | 5.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 32nC @ 10V | 1490pF @ 30V | 7.5V, 10V | ±20V | |||
|
19,000
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|
Vishay Siliconix | MOSFET N-CHAN 60V POWERPAK SO-8 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | - | 60V | 20.7A (Ta), 73A (Tc) | 5.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 32nC @ 10V | 1490pF @ 30V | 7.5V, 10V | ±20V | ||||
|
52,200
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|
Vishay Siliconix | MOSFET N-CHAN 60V POWERPAK SO-8 | TrenchFET® Gen IV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | - | 60V | 20.7A (Ta), 73A (Tc) | 5.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 32nC @ 10V | 1490pF @ 30V | 7.5V, 10V | ±20V | ||||
|
GET PRICE |
47,020
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|
Vishay Siliconix | MOSFET N-CHAN 60V POWERPAK 1212- | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 3.7W (Ta), 52W (Tc) | N-Channel | - | 60V | 17.4A (Ta), 65.3A (Tc) | 5.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 32nC @ 10V | 1490pF @ 30V | 7.5V, 10V | ±20V | |||
|
72,100
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|
Vishay Siliconix | MOSFET N-CHAN 60V POWERPAK 1212- | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 3.7W (Ta), 52W (Tc) | N-Channel | - | 60V | 17.4A (Ta), 65.3A (Tc) | 5.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 32nC @ 10V | 1490pF @ 30V | 7.5V, 10V | ±20V | ||||
|
40,000
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|
Vishay Siliconix | MOSFET N-CHAN 60V POWERPAK 1212- | TrenchFET® Gen IV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 3.7W (Ta), 52W (Tc) | N-Channel | - | 60V | 17.4A (Ta), 65.3A (Tc) | 5.8 mOhm @ 10A, 10V | 3.4V @ 250µA | 32nC @ 10V | 1490pF @ 30V | 7.5V, 10V | ±20V |