Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BUK7L11-34ARC,127
GET PRICE
RFQ
60,540
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 34V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 172W (Tc) N-Channel 34V 75A (Tc) 11 mOhm @ 30A, 10V 3.8V @ 1mA 53nC @ 10V 2506pF @ 25V 10V ±20V
NTD4970NT4G
GET PRICE
RFQ
37,820
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ON Semiconductor MOSFET N-CH 30V 38A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.38W (Ta), 24.6W (Tc) N-Channel 30V 8.5A (Ta), 36A (Tc) 11 mOhm @ 30A, 10V 2.5V @ 250µA 8.2nC @ 4.5V 774pF @ 15V 4.5V, 10V ±20V
NTD4970N-35G
Per Unit
$0.53
RFQ
25,020
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 30V 38A IPAK - Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 1.38W (Ta), 24.6W (Tc) N-Channel 30V 8.5A (Ta), 36A (Tc) 11 mOhm @ 30A, 10V 2.5V @ 250µA 8.2nC @ 4.5V 774pF @ 15V 4.5V, 10V ±20V
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