- Supplier Device Package :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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33,140
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|
ON Semiconductor | MOSFET N-CH 800V 5.5A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 158W (Tc) | N-Channel | - | 800V | 5.5A (Tc) | 2.5 Ohm @ 2.75A, 10V | 5V @ 250µA | 30nC @ 10V | 1310pF @ 25V | 10V | ±30V | |||
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75,840
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 800V 5.5A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 51W (Tc) | N-Channel | - | 800V | 5.5A (Tc) | 2.5 Ohm @ 2.75A, 10V | 5V @ 250µA | 30nC @ 10V | 1310pF @ 25V | 10V | ±30V | |||
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16,080
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 800V 5.5A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 51W (Tc) | N-Channel | - | 800V | 5.5A (Tc) | 2.5 Ohm @ 2.75A, 10V | 5V @ 250µA | 30nC @ 10V | 1310pF @ 25V | 10V | ±30V |
