- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
13 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
17,840
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 13A TO220FL | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3, Short Tab | TO-220FL | 100W (Tc) | N-Channel | - | 450V | 13A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 34nC @ 10V | 1600pF @ 25V | 10V | ±30V | ||
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72,200
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|
Infineon Technologies | MOSFET N-CH 200V 9.5A TO-263 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | ||
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GET PRICE |
29,340
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|
Infineon Technologies | MOSFET N-CH 200V 9.5A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | ||
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GET PRICE |
26,820
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|
Infineon Technologies | MOSFET N-CH 200V 9.5A TO220AB | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | ||
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|
GET PRICE |
53,360
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|
STMicroelectronics | MOSFET N-CH 500V 12A D2PAK | FDmesh™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 500V | 12A (Tc) | 400 mOhm @ 6A, 10V | 5V @ 250µA | 12nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||
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GET PRICE |
56,240
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|
STMicroelectronics | MOSFET N-CH 500V 12A D2PAK | FDmesh™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 500V | 12A (Tc) | 400 mOhm @ 6A, 10V | 5V @ 250µA | 12nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||
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GET PRICE |
38,800
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|
STMicroelectronics | MOSFET N-CH 500V 12A D2PAK | FDmesh™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 500V | 12A (Tc) | 400 mOhm @ 6A, 10V | 5V @ 250µA | 12nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||
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GET PRICE |
55,000
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|
STMicroelectronics | MOSFET N-CH 500V 14A TO-247 | FDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 160W (Tc) | N-Channel | - | 500V | 14A (Tc) | 400 mOhm @ 6A, 10V | 5V @ 250µA | 12nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||
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|
GET PRICE |
34,840
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|
STMicroelectronics | MOSFET N-CH 500V 12A TO-220 | FDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 500V | 12A (Tc) | 400 mOhm @ 6A, 10V | 5V @ 250µA | 12nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||
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|
18,540
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | |||
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|
69,340
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|
Infineon Technologies | MOSFET N-CH 200V 9.5A TO220-3 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
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|
53,140
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|
IXYS-RF | MOSFET N-CH 500V 12A TO247 | HiPerRF™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXFH) | 180W (Tc) | N-Channel | - | 500V | 12A (Tc) | 400 mOhm @ 6A, 10V | 5.5V @ 2.5mA | 54nC @ 10V | 1870pF @ 25V | 10V | ±20V | |||
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|
53,840
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-3PN | DTMOSII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 144W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V |
