- Manufacture :
- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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42,880
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|
IXYS | MOSFET N-CH 100V 334A SMPD | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 24-PowerSMD, 21 Leads | 24-SMPD | 680W (Tc) | N-Channel | - | 100V | 334A (Tc) | 2.6 mOhm @ 60A, 10V | 5V @ 8mA | 670nC @ 10V | 4700pF @ 10V | 10V | ±20V | ||||
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59,660
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|
STMicroelectronics | MOSFET N-CH 55V 180A H2PAK-6 | STripFET™ III | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H²PAK | 300W (Tc) | N-Channel | - | 55V | 180A (Tc) | 2.6 mOhm @ 60A, 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | 10V | ±20V | |||
|
50,540
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|
STMicroelectronics | MOSFET N-CH 55V 180A H2PAK-6 | STripFET™ III | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H²PAK | 300W (Tc) | N-Channel | - | 55V | 180A (Tc) | 2.6 mOhm @ 60A, 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | 10V | ±20V | ||||
|
GET PRICE |
56,440
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|
STMicroelectronics | MOSFET N-CH 55V 180A H2PAK-6 | STripFET™ III | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H²PAK | 300W (Tc) | N-Channel | - | 55V | 180A (Tc) | 2.6 mOhm @ 60A, 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | 10V | ±20V | |||
|
22,400
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|
IXYS | MOSFET N-CH 100V 420A TO-264 | GigaMOS™ HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 1670W (Tc) | N-Channel | - | 100V | 420A (Tc) | 2.6 mOhm @ 60A, 10V | 5V @ 8mA | 670nC @ 10V | 47000pF @ 25V | 10V | ±20V | ||||
|
47,820
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|
IXYS | MOSFET N-CH 100V 420A PLUS247 | GigaMOS™ HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 1670W (Tc) | N-Channel | - | 100V | 420A (Tc) | 2.6 mOhm @ 60A, 10V | 5V @ 8mA | 670nC @ 10V | 47000pF @ 25V | 10V | ±20V |