Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT41M80L
GET PRICE
RFQ
43,580
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 800V 43A TO-264 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 1040W (Tc) N-Channel - 800V 43A (Tc) 210 mOhm @ 20A, 10V 5V @ 2.5mA 260nC @ 10V 8070pF @ 25V 10V ±30V
IXFN40N90P
Per Unit
$14.01
RFQ
58,720
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IXYS MOSFET N-CH 900V 33A SOT227 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 695W (Tc) N-Channel - 900V 33A (Tc) 210 mOhm @ 20A, 10V 6.5V @ 1mA 230nC @ 10V 14000pF @ 25V 10V ±30V
APT41M80B2
Per Unit
$9.02
RFQ
12,780
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 800V 43A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1040W (Tc) N-Channel - 800V 43A (Tc) 210 mOhm @ 20A, 10V 5V @ 2.5mA 260nC @ 10V 8070pF @ 25V 10V ±30V
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