- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
28,620
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Toshiba Semiconductor and Storage | MOSFET N-CH 200V 21A 8-SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 200V | 13A (Ta) | 64 mOhm @ 6.5A, 10V | 4V @ 300µA | 11.2nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
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37,960
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 200V 21A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 200V | 13A (Ta) | 64 mOhm @ 6.5A, 10V | 4V @ 300µA | 11.2nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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27,180
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 200V 21A 8-SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 200V | 13A (Ta) | 64 mOhm @ 6.5A, 10V | 4V @ 300µA | 11.2nC @ 10V | 1100pF @ 100V | 10V | ±20V |
