1 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK8R2A06PL,S4X
Per Unit
$0.91
RFQ
59,040
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 36W (Tc) N-Channel - 60V 50A (Tc) 11.4 mOhm @ 8A, 4.5V 2.5V @ 300µA 28.4nC @ 10V 1990pF @ 25V 4.5V, 10V ±20V
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