Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFIB5N50LPBF
GET PRICE
RFQ
70,340
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 500V 4.7A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 42W (Tc) N-Channel 500V 4.7A (Tc) 800 mOhm @ 2.4A, 10V 5V @ 250µA 45nC @ 10V 1000pF @ 25V 10V ±30V
IRFU220_R4941
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RFQ
59,040
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 200V 4.6A I-PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 50W (Tc) N-Channel 200V 4.6A (Tc) 800 mOhm @ 2.4A, 10V 4V @ 250µA 18nC @ 10V 330pF @ 25V 10V ±20V
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