3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFH5220TR2PBF
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RFQ
41,480
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Infineon Technologies MOSFET N-CH 200V 3.8A PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 8.3W (Tc) N-Channel - 200V 3.8A (Ta), 20A (Tc) 99.9 mOhm @ 5.8A, 10V 5V @ 100µA 30nC @ 10V 1380pF @ 50V 10V ±20V
IRFH5220TR2PBF
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RFQ
24,720
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Infineon Technologies MOSFET N-CH 200V 3.8A PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 8.3W (Tc) N-Channel - 200V 3.8A (Ta), 20A (Tc) 99.9 mOhm @ 5.8A, 10V 5V @ 100µA 30nC @ 10V 1380pF @ 50V 10V ±20V
IRFH5220TRPBF
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RFQ
64,840
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 200V 3.8A PQFN HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 8.3W (Tc) N-Channel - 200V 3.8A (Ta), 20A (Tc) 99.9 mOhm @ 5.8A, 10V 5V @ 100µA 30nC @ 10V 1380pF @ 50V 10V ±20V
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