Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFR26N120P
Per Unit
$13.72
RFQ
65,800
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1200V 15A ISOPLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 320W (Tc) N-Channel - 1200V 15A (Tc) 500 mOhm @ 13A, 10V 6.5V @ 1mA 225nC @ 10V 14000pF @ 25V 10V ±30V
IXFX26N120P
Per Unit
$12.16
RFQ
37,940
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1200V 26A PLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel - 1200V 26A (Tc) 500 mOhm @ 13A, 10V 6.5V @ 1mA 225nC @ 10V 16000pF @ 25V 10V ±30V
Page 1 / 1