Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT29F80J
Per Unit
$16.23
RFQ
31,580
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 800V 31A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 543W (Tc) N-Channel - 800V 31A (Tc) 210 mOhm @ 24A, 10V 5V @ 2.5mA 303nC @ 10V 9326pF @ 25V 10V ±30V
APT44F80B2
Per Unit
$12.54
RFQ
79,380
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 800V 47A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1135W (Tc) N-Channel - 800V 47A (Tc) 210 mOhm @ 24A, 10V 5V @ 2.5mA 305nC @ 10V 9330pF @ 25V 10V ±30V
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