2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHP3055E,127
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RFQ
36,500
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 60V 10.3A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 33W (Tc) N-Channel - 60V 10.3A (Tc) 150 mOhm @ 5.5A, 10V 4V @ 1mA 5.8nC @ 10V 250pF @ 25V 10V ±20V
PHD3055E,118
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RFQ
40,120
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NXP USA Inc. MOSFET N-CH 60V 10.3A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 33W (Tc) N-Channel - 60V 10.3A (Tc) 150 mOhm @ 5.5A, 10V 4V @ 1mA 5.8nC @ 10V 250pF @ 25V 10V ±20V
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