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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPI80CN10N G
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RFQ
35,260
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Infineon Technologies MOSFET N-CH 100V 13A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 31W (Tc) N-Channel - 100V 13A (Tc) 80 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPP80CN10NGHKSA1
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RFQ
66,040
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Infineon Technologies MOSFET N-CH 100V 13A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 31W (Tc) N-Channel - 100V 13A (Tc) 80 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
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