Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP1M005A050HS
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RFQ
56,960
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Global Power Technologies Group MOSFET N-CH 500V 4A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 92.5W (Tc) N-Channel 500V 4A (Tc) 1.85 Ohm @ 2A, 10V 3.5V @ 250µA 11nC @ 10V 602pF @ 25V 10V ±30V
GP1M005A050FSH
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RFQ
53,280
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Global Power Technologies Group MOSFET N-CH 500V 4A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 32W (Tc) N-Channel 500V 4A (Tc) 1.85 Ohm @ 2A, 10V 3.5V @ 250µA 11nC @ 10V 602pF @ 25V 10V ±30V
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