- Manufacture :
- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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37,580
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|
ON Semiconductor | SF3 650V 165MOHM E TO247L | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 154W (Tc) | N-Channel | - | 650V | 19A (Tc) | 165 mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 39nC @ 10V | 1500pF @ 400V | 10V | ±30V | ||||
|
58,280
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|
ON Semiconductor | SUPERFET3 650V TO220 PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 154W (Tc) | N-Channel | - | 650V | 19A (Tc) | 165 mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 39nC @ 10V | 1500pF @ 400V | 10V | ±30V | ||||
|
69,960
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|
ON Semiconductor | MOSFET N-CH 650V 19A TO220F-3 | SuperFET® III | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 35W (Tc) | N-Channel | - | 650V | 19A (Tc) | 165 mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 35nC @ 10V | 1415pF @ 400V | 10V | ±30V | ||||
|
29,120
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|
ON Semiconductor | SF3 650V 165MOHM E TO220 | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 154W (Tc) | N-Channel | - | 650V | 19A (Tc) | 165 mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 39nC @ 10V | 1500pF @ 400V | 10V | ±30V | ||||
|
18,780
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|
ON Semiconductor | SUPERFET3 650V TO220F PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 35W (Tc) | N-Channel | - | 650V | 19A (Tc) | 165 mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 35nC @ 10V | 1415pF @ 400V | 10V | ±30V | ||||
|
44,900
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 600V | 38.8A (Ta) | 74 mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 135nC @ 10V | 4100pF @ 300V | 10V | ±30V |