6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$1.51
RFQ
37,580
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ON Semiconductor SF3 650V 165MOHM E TO247L SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 154W (Tc) N-Channel - 650V 19A (Tc) 165 mOhm @ 9.5A, 10V 4.5V @ 1.9mA 39nC @ 10V 1500pF @ 400V 10V ±30V
FCP165N65S3R0
Per Unit
$1.47
RFQ
58,280
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ON Semiconductor SUPERFET3 650V TO220 PKG SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 154W (Tc) N-Channel - 650V 19A (Tc) 165 mOhm @ 9.5A, 10V 4.5V @ 1.9mA 39nC @ 10V 1500pF @ 400V 10V ±30V
FCPF165N65S3L1
Per Unit
$1.77
RFQ
69,960
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ON Semiconductor MOSFET N-CH 650V 19A TO220F-3 SuperFET® III Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C Through Hole TO-220-3 Full Pack TO-220F-3 35W (Tc) N-Channel - 650V 19A (Tc) 165 mOhm @ 9.5A, 10V 4.5V @ 1.9mA 35nC @ 10V 1415pF @ 400V 10V ±30V
Default Photo
Per Unit
$1.77
RFQ
29,120
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor SF3 650V 165MOHM E TO220 SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 154W (Tc) N-Channel - 650V 19A (Tc) 165 mOhm @ 9.5A, 10V 4.5V @ 1.9mA 39nC @ 10V 1500pF @ 400V 10V ±30V
FCPF165N65S3R0L
Per Unit
$1.77
RFQ
18,780
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor SUPERFET3 650V TO220F PKG SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 35W (Tc) N-Channel - 650V 19A (Tc) 165 mOhm @ 9.5A, 10V 4.5V @ 1.9mA 35nC @ 10V 1415pF @ 400V 10V ±30V
TK39N60W5,S1VF
Per Unit
$3.65
RFQ
44,900
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 38.8A T0247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 270W (Tc) N-Channel - 600V 38.8A (Ta) 74 mOhm @ 19.4A, 10V 4.5V @ 1.9mA 135nC @ 10V 4100pF @ 300V 10V ±30V
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