4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK39A60W,S4VX
Per Unit
$5.60
RFQ
19,260
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 39A TO220-3 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel - 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110nC @ 10V 4100pF @ 300V 10V ±30V
TK39J60W,S1VQ
Per Unit
$5.60
RFQ
63,700
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 38.8A TO-3P DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110nC @ 10V 4100pF @ 300V 10V ±30V
TK39J60W5,S1VQ
Per Unit
$6.35
RFQ
69,960
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N CH 600V 38.8A TO-3P(N) DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 135nC @ 10V 4100pF @ 300V 10V ±30V
TK39N60W,S1VF
Per Unit
$5.98
RFQ
49,760
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N CH 600V 38.8A TO247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110nC @ 10V 4100pF @ 300V 10V ±30V
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