2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRL40S212
Per Unit
$0.86
RFQ
31,280
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 40V 195A StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 231W (Tc) N-Channel - 40V 195A (Tc) 1.9 mOhm @ 100A, 10V 2.4V @ 150µA 137nC @ 4.5V 8320pF @ 25V 4.5V, 10V ±20V
IRL40B212
Per Unit
$1.75
RFQ
38,260
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 40V 195A HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 231W (Tc) N-Channel - 40V 195A (Tc) 1.9 mOhm @ 100A, 10V 2.4V @ 150µA 137nC @ 4.5V 8320pF @ 25V 4.5V, 10V ±20V
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