Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCPF650N80Z
Per Unit
$1.44
RFQ
26,480
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 800V 8A TO220F SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 30.5W (Tc) N-Channel - 800V 8A (Tc) 650 mOhm @ 4A, 10V 4.5V @ 800µA 35nC @ 10V 1565pF @ 100V 10V ±20V
FCP650N80Z
Per Unit
$1.68
RFQ
68,860
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 800V 10A SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 162W (Tc) N-Channel - 800V 10A (Tc) 650 mOhm @ 4A, 10V 4.5V @ 800µA 35nC @ 10V 1565pF @ 100V 10V ±20V
Page 1 / 1