Package / Case :
Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$0.18
RFQ
30,020
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Infineon Technologies MOSFET N-CH 100V 1A SAWN ON FOIL OptiMOS™ Active - MOSFET (Metal Oxide) - Surface Mount Die Sawn on foil - N-Channel - 100V 1A (Tj) 100 mOhm @ 2A, 4.5V 2.1V @ 33µA - - 4.5V -
BSZ150N10LS3GATMA1
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RFQ
35,160
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Infineon Technologies MOSFET N-CH 100V 40A 8TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel - 100V 40A (Tc) 15 mOhm @ 20A, 10V 2.1V @ 33µA 35nC @ 10V 2500pF @ 50V 4.5V, 10V ±20V
BSZ150N10LS3GATMA1
Per Unit
$0.83
RFQ
52,340
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Infineon Technologies MOSFET N-CH 100V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel - 100V 40A (Tc) 15 mOhm @ 20A, 10V 2.1V @ 33µA 35nC @ 10V 2500pF @ 50V 4.5V, 10V ±20V
BSZ150N10LS3GATMA1
Per Unit
$0.30
RFQ
15,680
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 40A 8TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel - 100V 40A (Tc) 15 mOhm @ 20A, 10V 2.1V @ 33µA 35nC @ 10V 2500pF @ 50V 4.5V, 10V ±20V
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