- Series :
- Packaging :
- Technology :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
22 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
32,160
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|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
44,600
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|
NXP USA Inc. | MOSFET N-CH 30V 4.9A SOT-23 | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 1.9W (Tc) | N-Channel | - | 30V | 4.9A (Tc) | 47 mOhm @ 2A, 4.5V | 700mV @ 1mA | 9.3nC @ 4.5V | 445pF @ 30V | 1.8V, 4.5V | ±8V | ||
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GET PRICE |
55,600
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|
NXP USA Inc. | MOSFET N-CH 30V 4.9A SOT-23 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 1.9W (Tc) | N-Channel | - | 30V | 4.9A (Tc) | 47 mOhm @ 2A, 4.5V | 700mV @ 1mA | 9.3nC @ 4.5V | 445pF @ 30V | 1.8V, 4.5V | ±8V | ||
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|
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GET PRICE |
72,000
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|
NXP USA Inc. | MOSFET N-CH 30V 4.9A SOT-23 | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 1.9W (Tc) | N-Channel | - | 30V | 4.9A (Tc) | 47 mOhm @ 2A, 4.5V | 700mV @ 1mA | 9.3nC @ 4.5V | 445pF @ 30V | 1.8V, 4.5V | ±8V | ||
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|
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GET PRICE |
56,560
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|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
21,500
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|
ON Semiconductor | MOSFET N-CH 600V 17A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
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GET PRICE |
61,900
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|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | ||
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|
|
66,680
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|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
31,060
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|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
34,380
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|
ON Semiconductor | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 400V | 8V | ±18V | |||
|
|
15,100
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|
Transphorm | MOSFET N-CH 600V 9A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
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|
|
44,920
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|
Transphorm | MOSFET N-CH 600V 17A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
28,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Transphorm | MOSFET N-CH 600V 17A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
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|
|
46,120
One step to sell excess stocks.Or submit Qty to get quotes
|
Transphorm | MOSFET N-CH 600V 9A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
74,860
One step to sell excess stocks.Or submit Qty to get quotes
|
Transphorm | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
|
22,040
One step to sell excess stocks.Or submit Qty to get quotes
|
Transphorm | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
52,460
One step to sell excess stocks.Or submit Qty to get quotes
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | - | 650V | 16A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
|
40,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
|
15,060
One step to sell excess stocks.Or submit Qty to get quotes
|
Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
|
GET PRICE |
54,640
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
12,640
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
|
44,180
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V |
