- Manufacture :
- Part Status :
- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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35,820
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|
Microsemi Corporation | MOSFET N-CH 1000V 25A SOT-227 | POWER MOS 7® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 520W (Tc) | N-Channel | - | 1000V | 25A (Tc) | 350 mOhm @ 14A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5185pF @ 25V | 10V | ±30V | ||||
|
35,940
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|
IXYS | MOSFET N-CH 1000V 30A TO-264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 735W (Tc) | N-Channel | - | 1000V | 30A (Tc) | 400 mOhm @ 15A, 10V | 5V @ 8mA | 186nC @ 10V | 8200pF @ 25V | 10V | ±30V | ||||
|
64,700
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|
IXYS | MOSFET N-CH 1000V 30A PLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 735W (Tc) | N-Channel | - | 1000V | 30A (Tc) | 400 mOhm @ 15A, 10V | 5V @ 8mA | 186nC @ 10V | 8200pF @ 25V | 10V | ±30V | ||||
|
57,000
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|
IXYS | MOSFET N-CH 500V 52A SOT-227B | PolarHV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 625W (Tc) | N-Channel | - | 500V | 52A (Tc) | 85 mOhm @ 32A, 10V | 5V @ 8mA | 186nC @ 10V | 11000pF @ 25V | 10V | ±30V | ||||
|
18,440
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|
IXYS | MOSFET N-CH 500V 52A SOT-227B | PolarHV™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 625W (Tc) | N-Channel | - | 500V | 50A (Tc) | 85 mOhm @ 32A, 10V | 5V @ 8mA | 186nC @ 10V | 11000pF @ 25V | 10V | ±30V | ||||
|
GET PRICE |
34,800
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|
Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | POWER MOS 7® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 690W (Tc) | N-Channel | - | 1000V | 28A (Tc) | 350 mOhm @ 14A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5185pF @ 25V | 10V | ±30V | |||
|
GET PRICE |
69,920
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|
Infineon Technologies | MOSFET N-CH 75V 89A | StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME | 96W (Tc) | N-Channel | - | 75V | 89A (Tc) | 5.7 mOhm @ 53A, 10V | 3.7V @ 150µA | 186nC @ 10V | 6504pF @ 25V | 6V, 10V | ±20V | |||
|
34,280
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|
Infineon Technologies | MOSFET N-CH 75V 89A | StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME | 96W (Tc) | N-Channel | - | 75V | 89A (Tc) | 5.7 mOhm @ 53A, 10V | 3.7V @ 150µA | 186nC @ 10V | 6504pF @ 25V | 6V, 10V | ±20V | ||||
|
34,300
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 75V 89A | StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME | 96W (Tc) | N-Channel | - | 75V | 89A (Tc) | 5.7 mOhm @ 53A, 10V | 3.7V @ 150µA | 186nC @ 10V | 6504pF @ 25V | 6V, 10V | ±20V |