1 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFP4668PBF
Per Unit
$2.94
RFQ
47,360
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 200V 130A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 200V 130A (Tc) 9.7 mOhm @ 81A, 10V 5V @ 250µA 241nC @ 10V 10720pF @ 50V 10V ±30V
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