- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
40,780
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A 6UDFN | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 185 mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | ||
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38,560
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A 6UDFN | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 185 mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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52,560
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A 6UDFN | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 185 mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V |
