Supplier Device Package :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STP8NS25
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RFQ
62,800
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STMicroelectronics MOSFET N-CH 250V 8A TO-220 MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel - 250V 8A (Tc) 450 mOhm @ 4A, 10V 4V @ 250µA 51.8nC @ 10V 770pF @ 25V 10V ±20V
IRF634
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RFQ
44,020
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STMicroelectronics MOSFET N-CH 250V 8A TO-220 MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel - 250V 8A (Tc) 450 mOhm @ 4A, 10V 4V @ 250µA 51.8nC @ 10V 770pF @ 25V 10V ±20V
STP8NS25FP
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RFQ
22,620
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STMicroelectronics MOSFET N-CH 250V 8A TO-220FP MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 250V 8A (Tc) 450 mOhm @ 4A, 10V 4V @ 250µA 51.8nC @ 10V 770pF @ 25V 10V ±20V
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