1 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SCT3030ALGC11
Per Unit
$12.36
RFQ
67,680
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET NCH 650V 70A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 262W (Tc) N-Channel 650V 70A (Tc) 39 mOhm @ 27A, 18V 5.6V @ 13.3mA 104nC @ 18V 1526pF @ 500V 18V +22V, -4V
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