- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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40,780
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|
Renesas Electronics America | MOSFET N-CH 30V 8HVSON | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | - | 1.5W (Ta), 16.5W (Tc) | N-Channel | - | 30V | 24A (Tc) | 4.6 mOhm @ 24A, 10V | - | 57nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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37,300
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|
Rohm Semiconductor | MOSFET N-CH 30V 13A 8-SOIC | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | - | N-Channel | - | 30V | 13A (Ta) | 9.5 mOhm @ 13A, 10V | - | 45nC @ 5V | 2600pF @ 10V | - | - | ||
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GET PRICE |
16,680
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|
Rohm Semiconductor | MOSFET N-CH 30V 13A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | - | N-Channel | - | 30V | 13A (Ta) | 9.5 mOhm @ 13A, 10V | - | 45nC @ 5V | 2600pF @ 10V | - | - | ||
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GET PRICE |
79,360
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|
Rohm Semiconductor | MOSFET N-CH 30V 13A 8-SOIC | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | - | N-Channel | - | 30V | 13A (Ta) | 9.5 mOhm @ 13A, 10V | - | 45nC @ 5V | 2600pF @ 10V | - | - | ||
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GET PRICE |
16,340
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 14A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 80W (Tc) | N-Channel | - | 500V | 14A (Ta) | 400 mOhm @ 7A, 10V | 4V @ 1mA | 58nC @ 10V | 2600pF @ 10V | 10V | ±30V | ||
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51,460
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|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | ||
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70,480
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|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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63,080
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|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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GET PRICE |
78,840
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | ||
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15,400
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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|
57,080
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V |
