4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$0.44
RFQ
12,380
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Vishay Siliconix MOSFET N-CH 30V 60A POWERPAKSO-8 TrenchFET® Gen III Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 83W (Tc) N-Channel - 30V 60A (Tc) 1.8 mOhm @ 20A, 10V 2.5V @ 250µA 130nC @ 10V 4980pF @ 15V 4.5V, 10V ±20V
SIR158DP-T1-GE3
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RFQ
58,860
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Vishay Siliconix MOSFET N-CH 30V 60A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.4W (Ta), 83W (Tc) N-Channel - 30V 60A (Tc) 1.8 mOhm @ 20A, 10V 2.5V @ 250µA 130nC @ 10V 4980pF @ 15V 4.5V, 10V ±20V
SIR158DP-T1-GE3
Per Unit
$1.07
RFQ
40,020
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Vishay Siliconix MOSFET N-CH 30V 60A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.4W (Ta), 83W (Tc) N-Channel - 30V 60A (Tc) 1.8 mOhm @ 20A, 10V 2.5V @ 250µA 130nC @ 10V 4980pF @ 15V 4.5V, 10V ±20V
SIR158DP-T1-GE3
Per Unit
$0.47
RFQ
22,000
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 30V 60A PPAK SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.4W (Ta), 83W (Tc) N-Channel - 30V 60A (Tc) 1.8 mOhm @ 20A, 10V 2.5V @ 250µA 130nC @ 10V 4980pF @ 15V 4.5V, 10V ±20V
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