- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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15,880
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|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 18A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 33.8W (Tc) | N-Channel | 600V | 18A (Tc) | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | 1273pF @ 100V | 10V | ±30V | |||
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77,740
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|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 13A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 32.1W (Tc) | N-Channel | 600V | 13A (Tc) | 260 mOhm @ 3.9A, 10V | 4V @ 250µA | 30nC @ 10V | 1273pF @ 100V | 10V | ±30V | |||
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53,180
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 18A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 33.8W (Tc) | N-Channel | 600V | 18A (Tc) | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | 1273pF @ 100V | 10V | ±30V | |||
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75,740
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|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 18A TO263 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 150.6W (Tc) | N-Channel | 600V | 18A (Tc) | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | 1273pF @ 100V | 10V | ±30V | ||
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73,940
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|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 18A TO263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 150.6W (Tc) | N-Channel | 600V | 18A (Tc) | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | 1273pF @ 100V | 10V | ±30V | |||
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52,580
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|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 18A TO263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 150.6W (Tc) | N-Channel | 600V | 18A (Tc) | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | 1273pF @ 100V | 10V | ±30V |
