4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT22F120L
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RFQ
44,780
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Microsemi Corporation MOSFET N-CH 1200V 23A TO264 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 1040W (Tc) N-Channel - 1200V 23A (Tc) 700 mOhm @ 12A, 10V 5V @ 2.5mA 260nC @ 10V 8370pF @ 25V 10V ±30V
APT22F120B2
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RFQ
67,180
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Microsemi Corporation MOSFET N-CH 1200V 23A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1040W (Tc) N-Channel - 1200V 23A (Tc) 700 mOhm @ 12A, 10V 5V @ 2.5mA 260nC @ 10V 8370pF @ 25V 10V ±30V
APT24M120B2
Per Unit
$11.80
RFQ
26,020
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Microsemi Corporation MOSFET N-CH 1200V 24A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1040W (Tc) N-Channel - 1200V 24A (Tc) 630 mOhm @ 12A, 10V 5V @ 2.5mA 260nC @ 10V 8370pF @ 25V 10V ±30V
APT24M120L
Per Unit
$11.61
RFQ
32,800
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 1200V 24A TO-264 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 1040W (Tc) N-Channel - 1200V 24A (Tc) 680 mOhm @ 12A, 10V 5V @ 2.5mA 260nC @ 10V 8370pF @ 25V 10V ±30V
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