Package / Case :
Supplier Device Package :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCH099N60E
Per Unit
$2.61
RFQ
59,280
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel - 600V 37A (Tc) 99 mOhm @ 18.5A, 10V 3.5V @ 250µA 114nC @ 10V 3465pF @ 380V 10V ±20V
FCP099N60E
Per Unit
$3.64
RFQ
79,600
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V TO220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 357W (Tc) N-Channel - 600V 37A (Tc) 99 mOhm @ 18.5A, 10V 3.5V @ 250µA 114nC @ 10V 3465pF @ 380V 10V ±20V
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