5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHP176NQ04T,127
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RFQ
55,480
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NXP USA Inc. MOSFET N-CH 40V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 40V 75A (Tc) 4.3 mOhm @ 25A, 10V 4V @ 1mA 68.9nC @ 10V 3620pF @ 25V 10V ±20V
PHB176NQ04T,118
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RFQ
42,920
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NXP USA Inc. MOSFET N-CH 40V 75A D2PAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 250W (Tc) N-Channel - 40V 75A (Tc) 4.3 mOhm @ 25A, 10V 4V @ 1mA 68.9nC @ 10V 3620pF @ 25V 10V ±20V
IXTH64N10L2
Per Unit
$3.20
RFQ
12,960
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IXYS MOSFET N-CH 100V 64A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel - 100V 64A (Tc) 32 mOhm @ 32A, 10V 4.5V @ 250µA 100nC @ 10V 3620pF @ 25V 10V ±20V
SQM47N10-24L_GE3
Per Unit
$0.63
RFQ
35,100
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Vishay Siliconix MOSFET N-CH 100V 47A TO263 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 136W (Tc) N-Channel - 100V 47A (Tc) 24 mOhm @ 40A, 10V 2.5V @ 250µA 72nC @ 10V 3620pF @ 25V 4.5V, 10V ±20V
IXTA64N10L2
Per Unit
$6.09
RFQ
62,040
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IXYS N-CHANNEL: LINEAR POWER MOSFETS Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AA 357W (Tc) N-Channel - 100V 64A (Tc) 32 mOhm @ 500mA, 10V 4.5V @ 250µA 100nC @ 10V 3620pF @ 25V 10V ±30V
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