- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
65,400
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|
Infineon Technologies | MOSFET N-CH 100V 13A 8PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.6W (Ta), 156W (Tc) | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 4.5V, 10V | ±16V | ||
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GET PRICE |
63,400
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 13A 8PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.6W (Ta), 156W (Tc) | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 4.5V, 10V | ±16V | ||
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GET PRICE |
72,460
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 13A 8PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 4.5V, 10V | ±16V | ||
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24,700
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 13A 8PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 4.5V, 10V | ±16V | |||
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62,340
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 13A 8PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 4.5V, 10V | ±16V |
