6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP1M004A090H
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RFQ
24,600
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Global Power Technologies Group MOSFET N-CH 900V 4A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 123W (Tc) N-Channel 900V 4A (Tc) 4 Ohm @ 2A, 10V 4V @ 250µA 25nC @ 10V 955pF @ 25V 10V ±30V
GP1M004A090FH
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RFQ
15,360
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Global Power Technologies Group MOSFET N-CH 900V 4A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38.7W (Tc) N-Channel 900V 4A (Tc) 4 Ohm @ 2A, 10V 4V @ 250µA 25nC @ 10V 955pF @ 25V 10V ±30V
TSM4N80CI C0G
Per Unit
$1.12
RFQ
78,980
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 4A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 38.7W (Tc) N-Channel 800V 4A (Tc) 3 Ohm @ 1.2A, 10V 4V @ 250µA 20nC @ 10V 955pF @ 25V 10V ±30V
TSM4N90CI C0G
Per Unit
$1.08
RFQ
25,340
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 4A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 38.7W (Tc) N-Channel 900V 4A (Tc) 4 Ohm @ 2A, 10V 4V @ 250µA 25nC @ 10V 955pF @ 25V 10V ±30V
TSM4N90CZ C0G
Per Unit
$1.00
RFQ
14,600
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 4A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 38.7W (Tc) N-Channel 900V 4A (Tc) 4 Ohm @ 2A, 10V 4V @ 250µA 25nC @ 10V 955pF @ 25V 10V ±30V
TSM4N80CZ C0G
Per Unit
$0.94
RFQ
20,600
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 4A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 38.7W (Tc) N-Channel 800V 4A (Tc) 3 Ohm @ 1.2A, 10V 4V @ 250µA 20nC @ 10V 955pF @ 25V 10V ±30V
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