- Part Status :
- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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24,600
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|
Global Power Technologies Group | MOSFET N-CH 900V 4A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 123W (Tc) | N-Channel | 900V | 4A (Tc) | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | 10V | ±30V | |||
|
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15,360
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|
Global Power Technologies Group | MOSFET N-CH 900V 4A TO220F | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38.7W (Tc) | N-Channel | 900V | 4A (Tc) | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | 10V | ±30V | |||
|
78,980
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 4A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 38.7W (Tc) | N-Channel | 800V | 4A (Tc) | 3 Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | 955pF @ 25V | 10V | ±30V | ||||
|
25,340
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 4A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 38.7W (Tc) | N-Channel | 900V | 4A (Tc) | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | 10V | ±30V | ||||
|
14,600
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 4A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 38.7W (Tc) | N-Channel | 900V | 4A (Tc) | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | 10V | ±30V | ||||
|
20,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 4A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 38.7W (Tc) | N-Channel | 800V | 4A (Tc) | 3 Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | 955pF @ 25V | 10V | ±30V |