- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
49,300
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|
Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 75W (Tc) | N-Channel | - | 40V | 72A (Tc) | 9.4 mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | 4810pF @ 25V | 10V | ±20V | ||
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73,240
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|
IXYS | MOSFET N-CH 650V 46A TO-247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 660W (Tc) | N-Channel | - | 650V | 46A (Tc) | 76 mOhm @ 23A, 10V | 5.5V @ 4mA | 75nC @ 10V | 4810pF @ 25V | 10V | ±30V | |||
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28,160
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|
Infineon Technologies | MOSFET N-CH TO263-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 75W (Tc) | N-Channel | - | 40V | 72A (Tc) | 9.1 mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | 4810pF @ 25V | 10V | ±20V | |||
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GET PRICE |
22,040
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|
Infineon Technologies | MOSFET N-CH 40V 100A 8TDSON | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 115W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.7 mOhm @ 50A, 10V | 3.4V @ 60µA | 83nC @ 10V | 4810pF @ 25V | 7V, 10V | ±20V | ||
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78,460
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|
Infineon Technologies | MOSFET N-CH 40V 100A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 115W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.7 mOhm @ 50A, 10V | 3.4V @ 60µA | 83nC @ 10V | 4810pF @ 25V | 7V, 10V | ±20V | |||
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14,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 40V 100A 8TDSON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 115W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.7 mOhm @ 50A, 10V | 3.4V @ 60µA | 83nC @ 10V | 4810pF @ 25V | 7V, 10V | ±20V |
