4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF7473PBF
Per Unit
$0.36
RFQ
65,620
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 6.9A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 6.9A (Ta) 26 mOhm @ 4.1A, 10V 5.5V @ 250µA 61nC @ 10V 3180pF @ 25V 10V ±20V
IRF7473TRPBF
GET PRICE
RFQ
48,260
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 6.9A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 6.9A (Ta) 26 mOhm @ 4.1A, 10V 5.5V @ 250µA 61nC @ 10V 3180pF @ 25V 10V ±20V
IRF7473TRPBF
Per Unit
$0.88
RFQ
43,360
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 6.9A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 6.9A (Ta) 26 mOhm @ 4.1A, 10V 5.5V @ 250µA 61nC @ 10V 3180pF @ 25V 10V ±20V
IRF7473TRPBF
Per Unit
$0.34
RFQ
58,280
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 6.9A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 6.9A (Ta) 26 mOhm @ 4.1A, 10V 5.5V @ 250µA 61nC @ 10V 3180pF @ 25V 10V ±20V
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