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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPI04CN10N G
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RFQ
75,820
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Infineon Technologies MOSFET N-CH 100V 100A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 100V 100A (Tc) 4.2 mOhm @ 100A, 10V 4V @ 250µA 210nC @ 10V 13800pF @ 50V 10V ±20V
IPP04CN10NG
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RFQ
64,900
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Infineon Technologies MOSFET N-CH 100V 100A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 300W (Tc) N-Channel - 100V 100A (Tc) 4.2 mOhm @ 100A, 10V 4V @ 250µA 210nC @ 10V 13800pF @ 50V 10V ±20V
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